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1.5V Drive Pch MOSFET
RT1A040ZP
Structure Silicon P-channel MOSFET Dimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V)
(1)
(2)
(3)
(4)
Abbreviated symbol : YE
Each lead has same dimensions
Applications Switching
Packaging specifications
Package Type RT1A040ZP Code Basic ordering unit(piecies) Taping TR 3000
Equivalent circuit
(8) (7) (6) (5)
2 1
(1) Drain (2) Drain (3) Drain (4) Gate (5) Source (6) Drain (7) Drain (8) Drain
(1)
(2)
(3)
(4)
*1 ESD PROTECTION DIODE *2 BODY DIODE
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temerature
1 Pw 10s, Duty cycle 1% 2 When mounted on a ceramic board
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD Tch Tstg
Limits -12 10 4 16 -1 -16 1.25 150 -55 to +150
Unit V V A A A A W C C
2
Thermal resistance
Parameter Channel to ambient
When mounted on a ceramic board
Symbol Rth(ch-a)
Limits 100
Unit C / W
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1/5
2009.01 - Rev.A
RT1A040ZP
Electrical characteristics (Ta=25C)
Parameter Symbol Min. IGSS Gate-source leakage - Drain-source breakdown voltage V(BR) DSS -12 Zero gete voltage drain current IDSS - Gate threshold voltage VGS (th) -0.3 - - Static drain-source on-state RDS (on) resistance - - Yfs 6.5 Forward transfer admittance Input capacitance Ciss - Coss Output capacitance - Reverse transfer capacitance Crss - - Turn-on delay time td (on) tr Rise time - Turn-off delay time - td (off) tf - Fall time Qg Total gate charge - - Gate-source charge Qgs Qgd Gate-drain charge -
Pulsed
Data Sheet
Typ. - - - - 22 30 40 55 - 2350 310 280 11 70 380 210 30 4.0 3.5
Max. 10 - -1 -1.0 30 42 60 110 - - - - - - - - - - -
Unit A V A V m m m m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=10V, VDS=0V ID= -1mA, VGS=0V VDS= -12V, VGS=0V VDS= -6V, ID= -1mA ID= -4A, VGS= -4.5V ID= -2A, VGS= -2.5V ID= -2A, VGS= -1.8V ID= -0.8A, VGS= -1.5V VDS= -6V, ID= -4A VDS= -6V VGS=0V f=1MHz VDD -6V ID= -2A VGS= -4.5V RL 3 RG=10 VDD -6V RL 1.5 RG=10 ID= -4A VGS= -4.5V
Body diode characteristics (Source -drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. -1.2
Unit V
Conditions IS= -4A, VGS=0V
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2/5
2009.01 - Rev.A
RT1A040ZP
Electrical characteristic curves
10
-1.8V -1.5V
10
Data Sheet
10 DRAIN CURRENT : -ID[A] -4.5V -2.2V -1.7V
VDS=-6.0V Pulsed
DRAIN CURRENT : -ID[A]
DRAIN CURRENT : -ID[A]
8 6 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0
-10V -4.5V -2.5V -1.3V
8
-1.3V
1
6
-1.2V
4
0.1
Ta=125 Ta=75 Ta=25 Ta= -25
VGS=-1.1V
2
VGS=-1.2V
Ta=25 Pulsed
Ta=25 Pulsed
0 2 4 6 8 10
0.01
0
0.001 0.0
0.5
1.0
1.5
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics()
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics()
GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
Ta=25 Pulsed
VGS= -4.5V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
1000
1000
1000 VGS= -2.5V Pulsed 100 Ta=125C Ta=75C Ta=25C Ta= -25C
100
100
Ta=125C Ta=75C Ta=25C Ta= -25C
10
VGS= VGS= VGS= VGS= 0.1 1
-1.5V -1.8V -2.5V -4.5V 10
10
10
1
1 0.1 1 DRAIN CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current() 10
1 0.1 1 DRAIN CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current() 10
DRAIN CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
VGS= -1.8V Pulsed
100
Ta=125C Ta=75C Ta=25C Ta= -25C
VGS= -1.5V Pulsed
100
Ta=125C Ta=75C Ta=25C Ta= -25C
FORWARD TRANSFER ADMITTANCE : |Yfs|[S]
1000
1000
100
VDS= -6V Pulsed
10
10
10
1
Ta= -25C Ta=25C Ta=75C Ta=125C
1 0.1 1 DRAIN CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain 10
1 0.1 1 DRAIN CURRENT : -ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain 10
0 0.1 1.0 10.0
DRAIN CURRENT : -ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current
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3/5
2009.01 - Rev.A
RT1A040ZP
REVERSE DRAIN CURRENT : -Is [A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
10
Data Sheet
100 80 ID= -4.0A 60 ID= -2.0A 40 20 0 0 2 4 6 8 10 Ta=25C Pulsed 10000 Ta=25 VDD= -6.0V VGS=-4.5V RG=10 Pulsed
SWITCHING TIME : t [ns]
1
Ta=125C Ta=75C Ta=25C Ta= -25C
1000
100
td(off) tf
0.1
VGS=0V Pulsed
0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2
10
tr td(on)
1 0.0 0.1 1.0 10.0
SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain
GATE-SOURCE VOLTAGE : -VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source
DRAIN-CURRENT : -ID[A] Fig.12 SwitchingCharacteristics
5 GATE-SOURCE VOLTAGE : -VGS [V] 4 3 2 1 0 0 5 10 15 20 25 30 Ta=25 VDD=-6V ID=-4.0A RG=10 Pulsed
10000
Ciss
CAPACITANCE : C [pF]
Ta=25 f=1MHz VGS=0V
1000
Crss
Coss
100 0.01 0.1 1 10 100
TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.14 Typical Capacitance vs. Drain-Source
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4/5
2009.01 - Rev.A
RT1A040ZP
Measurement circuits
Data Sheet
Pulse Width
ID VGS RL D.U.T. RG VDD VDS
VGS
10% 50% 10%
90%
50% 10% 90%
VDS
90% td(on) ton tr td(off) toff
tf
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
VG
ID VGS RL IG(Const.) RG D.U.T. VDD
VDS
VGS Qgs
Qg
Qgd
Charge
Fig.2-1 Gate Charge Measurement Circuit
FIg.2-2 Gate Charge Waveform
Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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5/5
2009.01 - Rev.A
Appendix
Notes
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